symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max 16.7 25 40 50 r jc 1.9 2.5 w t a =70c 1.6 power dissipation a t a =25c p dsm 2.5 repetitive avalanche energy l=0.1mh c 40 a mj junction and storage temperature range a p d c 60 30 -55 to 175 t c =100c avalanche current c 18 i d 18 12 40 pulsed drain current c power dissipation b t c =25c continuous drain current g maximum units parameter t c =25c t c =100c absolute maximum ratings t a =25c unless otherwise noted v v 25 gate-source voltage drain-source voltage 30 c/w maximum junction-to-ambient a steady-state c/w w maximum junction-to-case b steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja AOD402 features v ds (v) = 30v i d = 18 a (v gs = 20v) r ds(on) < 15 m ? (v gs = 20v) r ds(on) < 18 m ? (v gs = 10v) r ds(on) < 44 m ? (v gs = 4.5v) general description the AOD402 uses advanced trench technology and design to provide excellent r ds(on) with low gate charge. this device is suitable for use in pwm, laod switching and general purpose applications. standard product AOD402 is pb-free (meets rohs & sony 259 specifications). AOD402l is a green product ordering option. AOD402 and AOD402l are electrically identical. g d s g d s t o-252 d - pak t op view drain connected to t ab effect transistor n-channel enhancement mode field www.freescale.net.cn 1 / 4
AOD402 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 1 2.4 3 v i d(on) 40 a 12 15 t j =125c 17.4 21 15 18 36 44 m ? g fs 24 s v sd 0.8 1 v i s 18 a c iss 769 pf c oss 185 pf c rss 131 pf r g 0.7 ? q g(10v) 15.9 nc q gs 2.44 nc q gd 4.92 nc t d(on) 6.2 ns t r 10.9 ns t d(off) 16 ns t f 4.8 ns t rr 18 ns q rr 8.1 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =18a, di/dt=100a/ s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =15v, i d =18a, r l =0.82 ? , r gen =3 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =10v, i d =18a gate source charge gate drain charge m ? v gs =4.5v, i d =6a i s =18a, v gs =0v v ds =5v, i d =18a v gs =10v, i d =18a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss a gate threshold voltage v ds =v gs , i d =250 a v ds =24v, v gs =0v v ds =0v, v gs =25v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =10v, v ds =5v v gs =20v, i d =18a reverse transfer capacitance i f =18a, di/dt=100a/ s v gs =0v, v ds =15v, f=1mhz switching parameters a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the power dissipation p dsm is based on r ja and the maximum allowed junction temperature of 150c. the value in any given application depen d on the user's specific board design, and the maximum temperature of 175c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c: repetitive rating, pulse width limited by junction temperature t j(max) =175c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. g. the maximum current rating is limited by bond-wires. rev3: august 2005 www.freescale.net.cn 2 / 4
AOD402 typical electrical and thermal characteristic s 0 5 10 15 20 25 30 35 40 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =4v 3.5v 6v 7v 10v 4.5v 5v 0 5 10 15 20 25 30 2 2.5 3 3.5 4 4.5 5 5.5 v gs (volts) figure 2: transfer characteristics i d (a) 0 10 20 30 40 50 60 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25 c 125 c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =20v,18a v gs =10v, 18a 0 10 20 30 40 50 60 4 8 12 16 20 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125 c v ds =5v v gs =4.5v v gs =10 v v gs =20v i d =18a 25 c 125 c www.freescale.net.cn 3 / 4
AOD402 typical electrical and thermal characteristic s 0 2 4 6 8 10 048121620 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 50 60 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z ja normalized transient thermal resistance c oss c r ss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 100 s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c, t a =25c v ds =15v i d =18a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =50c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c www.freescale.net.cn 4 / 4
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